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SUP90N08-7m7P
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
1000
Limited by R DS(on) *
10 μ s
100
100 μ s
1 ms
10
1
150 °C
25 °C
10
1
0.1
0.01
T C = 25 °C
Single P u lse
BVDSS
10 ms
100 ms, DC
0 . 0 0 0 0 1
0.0001
0.001
0.01
0 . 1
1.0
0.1
1
10
100
T A V (s)
Single Pulse Avalanche Current Capability vs. Time
150
120
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Case
90
Package Limited
60
30
* The power dissipation P D is based on T J(max) = 150 °C, using
0
junction-to-case thermal resistance, and is more useful in settling the
0
25
50
75
100
125
150
upper dissipation limit for cases where additional heatsinking is used.
1
0.1
0.01
T C - Case Temperat u re (°C)
Current Derating*, Junction-to-Case
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
It is used to determine the current rating, when this rating falls below
the package limit.
10 -4
10 -3
10 -2
10 -1
1
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68638.
Document Number: 68638
S-81048-Rev. A, 12-May-08
www.vishay.com
5
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